Global SiC and GaN Power Semiconductor Market Size, Share & F.

Global SiC and GaN Power Semiconductor Market

Published Date:Jul 2025
Industry: Semiconductor
Format: PDF
Page: 200
Forecast Period: 2025-2033
Historical Range: 2020-2024

Global SiC and GaN Power Semiconductor Market Segmentation, By Material Type (Silicon Carbide (SiC) {SiC Diodes, SiC MOSFETs, SiC Modules, SiC Bare Dies}, Gallium Nitride (GaN) {GaN Power Transistors, GaN Power ICs, GaN-on-Si, GaN-on-SiC}), By Wafer Size (≤150mm, 200mm, ≥300mm), By Voltage Range (Low Voltage (<600V), Medium Voltage (600V-1200V), High Voltage (>1200V)), By Application (Automotive, Industrial, Consumer Electronics, Energy & Power, Telecom & Datacom, Aerospace & Defense, Others), By End User (OEMs, ODMs, EMS Providers)- Industry Trends and Forecast to 2033

 

Global SiC and GaN Power Semiconductor Market size was valued at USD 2467.2 million in 2024 and is expected to grow at a CAGR of 21.9% during the forecast period of 2025 to 2033.

 

Global SiC and GaN Power Semiconductor Market Overview

The global SiC (Silicon Carbide) and GaN (Gallium Nitride) strength semiconductor marketplace is witnessing strong growth, driven with the aid of using growing demand for electricity-green solutions in electric vehicles (EVs), renewable electricity systems, and commercial programs. These wide-bandgap substances provide advanced thermal conductivity, better breakdown voltage, and quicker switching speeds as compared to standard silicon, allowing compact, high-overall performance designs. Key tendencies consist of technological improvements in wafer production, developing adoption in rapid chargers and inverters, and strategic collaborations amongst main players. While better preliminary expenses and delivery chain challenges persist, increasing programs in statistics centers, telecom, and aerospace gift giant possibilities for marketplace growth worldwide.

 

Global SiC and GaN Power Semiconductor Market Scope

Factors

Description

Years Considered

·         Historical Period: 2020-2023

·         Base Year: 2024

·         Forecast Period: 2025-2033

Segments

·         By Material Type: Silicon Carbide (SiC) {SiC Diodes, SiC MOSFETs, SiC Modules, SiC Bare Dies}, Gallium Nitride (GaN) {GaN Power Transistors, GaN Power ICs, GaN-on-Si, GaN-on-SiC}

·         By Wafer Size: ≤150mm, 200mm, ≥300mm

·         By Voltage Range: Low Voltage (<600V), Medium Voltage (600V-1200V), High Voltage (>1200V)

·         By Application: Automotive, Industrial, Consumer Electronics, Energy & Power, Telecom & Datacom, Aerospace & Defense, Others

·         By End User: OEMs, ODMs, EMS Providers

Countries Catered

North America

·         United States

·         Canada

·         Mexico

Europe

·         United Kingdom

·         Germany

·         France

·         Spain

·         Italy

·         Rest of Europe

Asia Pacific

·         China

·         India

·         Japan

·         Australia

·         South Korea

·         Rest of Asia Pacific

Latin America

·         Brazil

·         Argentina

·         Rest of Latin America

Middle East & Africa

·         Saudi Arabia

·         South Africa

·         Rest of MEA

Key Companies

·         STMicroelectronics N.V.

·         Infineon Technologies

·         Wolfspeed, Inc.

·         ROHM Semiconductor

·         On Semiconductor Corp

·         NXP Semiconductors N.V.

·         Microsemi Corporation

·         Qorvo (United Silicon Carbide Inc.)

·         IQE PLC

·         AGC Inc.

·         Genesic Semiconductor Inc.

·         Panasonic Corporation

Market Trends

·         Increasing integration of wide-bandgap (WBG) semiconductors in EV powertrains and renewable energy applications.

·         Rising demand for high-frequency, high-efficiency power converters in 5G telecom infrastructure.

 

Global SiC and GaN Power Semiconductor Market Dynamics

The global SiC (Silicon Carbide) and GaN (Gallium Nitride) strength semiconductor market is experiencing dynamic increase, fueled thru manner of way of increasing adoption in electric vehicles (EVs), renewable electricity systems, commercial enterprise automation, and telecom infrastructure. Key drivers embody the superior properties of these wide-bandgap (WBG) materials, collectively with high breakdown voltage, thermal conductivity, and fast switching capability, which permit higher overall performance, strength density, and miniaturization in comparison to traditional silicon-based semiconductors. The market is similarly supported through manner of way of growing fast chargers, onboard chargers, and immoderate-overall performance inverters, essential to meeting the global push for electrification and sustainability.

 

Prominent developments embody technological advancements, collectively with the glide toward 200mm SiC wafers and superior GaN fabrication techniques, which reason to reduced prices and scale production. Strategic collaborations, mergers, and acquisitions thru manner of way of key game enthusiasts like Wolfspeed, Infineon, STMicroelectronics, and ROHM Semiconductor are reshaping the competitive landscape and accelerating innovation. However, the market faces restraints, together with higher upfront prices and supply chain disturbing conditions related to wafer production and cloth availability, which limit adoption in rate-sensitive segments. Opportunities abound in growing applications like statistics centers, 5G base stations, aerospace, and smart grids, wherein the decision for immoderate-frequency, inexperienced strength conversion is growing. Challenges remain, in particular spherical ensuring long-term device reliability in harsh environments and building a broader format understanding at some stage in industries. Overall, the combination of technological advancement, evolving applications, and supportive government policies is expected to strain great increase within the SiC and GaN strength semiconductor market in the approaching years, however, current rate and supply hurdles.

 

Global SiC and GaN Power Semiconductor Market Segment Analysis

The global SiC and GaN strength semiconductor marketplace is segmented withinside the route of several dimensions to reflect the form of technologies, packages, and production tendencies using growth. By fabric type, the marketplace is cut up into Silicon Carbide (SiC) and Gallium Nitride (GaN). Within SiC, key merchandise encompasses SiC diodes, SiC MOSFETs, SiC strength modules, and SiC naked dies, all of which allow better typical overall performance and compact layout in strength electronics. The GaN phase includes GaN strength transistors, GaN strength ICs, GaN-on-Silicon (GaN-on-Si), and GaN-on-Silicon Carbide (GaN-on-SiC), supplying advantages in high-frequency, low-loss packages like fast chargers and telecom devices. By wafer size, the marketplace covers ≤150mm, 200mm, and ≥300mm wafers. The transition closer to large wafers, mainly 200mm, is gaining momentum amongst foremost producers to improve manufacturing overall performance, decrease unit costs, and meet the growing demand in the car and business sectors. Although ≥300mm wafers are even though in a developing phase, ongoing R&D factors to destiny for scalability.

 

The voltage variety phase consists of low-voltage (1200V) gadgets appropriate for power infrastructure, electric buses, and rail. This variety illustrates how SiC and GaN answers cope with various strength control wishes within the route of sectors. In phrases of packages, the marketplace serves car (appreciably EV strength modules and onboard chargers), business automation and robotics, purchaser electronics like adapters and wi-fi chargers, strength & strength structures for renewable integration, telecom & datacom (mainly 5G base stations and servers), aerospace & protection for light-weight and high-reliability structures, and others such as scientific gadgets. Finally, with the useful resource of using forestall user, the marketplace caters to OEMs growing in-residence strength structures, ODMs designing merchandise for brands, and EMS providers (electronics production services) supplying settlement production and integration. This segmentation highlights the rate chain's complexity and the crucial function of collaborative partnerships in turning in next-generation, strength-green strength answers primarily based on SiC and GaN technologies.

 

Global SiC and GaN Power Semiconductor Market Regional Analysis

The regional dynamics in the global SiC and GaN strength semiconductor market suggests strong close by dynamics, with Asia-Pacific predominant due to fast growth in electric powered powered vehicles (EVs), renewable strength tasks, and 5G infrastructure, supported with the resource of the usage of governments in China, Japan, and South Korea. Europe follows, driven with the resource of the usage of bold carbon neutrality goals and a robust EV ecosystem, mainly in Germany and France, alongside strong investments in automobile strength electronics and industrial automation. North America advantages from technological leadership, R&D tasks, and the presence of key game enthusiasts like Wolfspeed and Qorvo, accelerating adoption in data centers, aerospace, and renewable strength. Latin America and the Middle East & Africa stay growing markets, showing capacity as EV adoption and grid modernization tasks expand. Across all regions, strategic collaborations, capacity expansions, and government incentives for easy strength and e-mobility hold to decorate demand, positioning SiC and GaN semiconductors as vital enablers of next-era strength conversion and overall performance improvements worldwide.

 

Global SiC and GaN Power Semiconductor Market Key Players

·         STMicroelectronics N.V.

·         Infineon Technologies

·         Wolfspeed, Inc.

·         ROHM Semiconductor

·         On Semiconductor Corp

·         NXP Semiconductors N.V.

·         Microsemi Corporation

·         Qorvo (United Silicon Carbide Inc.)

·         IQE PLC

·         AGC Inc.

·         Genesic Semiconductor Inc.

·         Panasonic Corporation

 

Recent Developments

In May 2024, Power Integrations agreed to acquire Odyssey Semiconductor’s GaN transistor assets bringing in their vertical GaN expertise to enhance its PowiGaN lineup and accelerate high-voltage, high-current GaN product development.

 

In June 2024, Renesas finalized the acquisition of GaN specialist Transphorm for $339million, integrating Transphorm’s GaN power product suite and reference designs, bolstering its SiC/GaN roadmap amidst wafer manufacturing expansion and a planned 10-year SiC wafer supply deal with Wolfspeed.

 

Research Methodology

At Foreclaro Global Research, our research methodology is firmly rooted in a comprehensive and systematic approach to market research. We leverage a blend of reliable public and proprietary data sources, including industry reports, government publications, company filings, trade journals, investor presentations, and credible online databases. Our analysts critically evaluate and triangulate information to ensure accuracy, consistency, and depth of insights. We follow a top-down and bottom-up data modelling framework to estimate market sizes and forecasts, supplemented by competitive benchmarking and trend analysis. Each research output is tailored to client needs, backed by transparent data validation practices, and continuously refined to reflect dynamic market conditions.

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